FPD750 Datasheet, PHEMT, Filtronic Compound Semiconductors

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FPD750 Features and benefits

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* 27.5 dBm Linear Output Power at 12 GHz 11.5 dB Power Gain at 12 GHz 14.5 dB Max Stable Gain at 12 GHz 38 dBm Output IP3 50% Power-Added Eff.

FPD750 Application

The FPD750 also features Si3N4 passivation and is available in the low cost plastic SOT89 SOT343 and DFN packages. TYP.

FPD750 Description

The www.DataSheet4U.com FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 750 µm Schottky barrier gate, defined by highresolution stepper-based photolithography. The double recessed gate struc.

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